creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 1.02 0.92 - - dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309005 version: i13 0.57 0.65 0.82 5 -- storage temperature range - 55 to +175 typical thermal resistance 7 operating junction temperature range -- note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle mbrf 735 mbrf 745 mbrf 750 mbrf 760 mbrf 790 mbrf 7100 voltage rate of change (rated v r ) 10000 - 55 to +150 v 0.84 0.72 15 10 0.75 0.92 maximum reverse current @ rated v r t j =25 t j =125 i r 0.1 ma - peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a peak repetitive reverse surge current (note 1) 7.5 maximum repetitive peak reverse voltage maximum rms voltage maximum instantaneous forward voltage (note 2) i f =7.5a, t j =25 i f =7.5a, t j =125 i f =15a, t j =25 i f =15a, t j =125 v f 1.0 0.5 peak repetitive forward current (rated vr, square wave, 20khz) i frm mbrf735 thru mbrf7150 taiwan semiconductor isolated schottk y barrier rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 15 a polarity: as marked maximum dc blocking voltage maximum average forward rectified current unit mbrf 7150 mechanical data ito-220ac case: ito-220ac mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol
creat by art part no. part no. mbrf760 mbrf760 mbrf760 (ta=25 unless otherwise noted) document number: ds_d1309005 version: i13 mbrf760hc0 h c0 aec-q101 qualified ratings and characteristics curves mbrf760 c0 c0 mbrf760 c0g c0 g green compound note 1: "xx" defines voltage from 35v (mbrf735) to 150v (mbrf7150) example preferred p/n aec-q101 qualified packing code green compound description mbrf7xx (note 1) prefix "h" c0 suffix "g" ito-220ac 50 / tube mbrf735 thru mbrf7150 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing 0 2 4 6 8 10 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heat sink mbrf735-mbrf745 mbrf750-mbrf7150 25 50 75 100 125 150 175 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse c urrent (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics tj=125 tj=25 mbrf735-mbrf745 mbrf750-mbrf7150 tj=75 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics tj=125 pulse width=300 s 1% duty cycle tj=25 mbrf735-mbrf745 mbrf750-mbrf760 mbrf790-MBRF7100 mbrf7150
creat by art min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.10 0.098 0.122 c 2.30 2.90 0.091 0.114 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.00 1.60 0.000 0.063 i 0.95 1.45 0.037 0.057 j 0.50 0.90 0.020 0.035 k 2.40 3.20 0.094 0.126 l 14.80 15.50 0.583 0.610 m - 4.10 - 0.161 n - 1.80 - 0.071 o 12.60 13.80 0.496 0.543 p 4.95 5.20 0.195 0.205 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309005 version: i13 marking diagram mbrf735 thru mbrf7150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 10 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p mbrf735-mbrf745 mbrf750-mbrf760 mbrf790-mbrf7150 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration (sec) fig. 6- typical transient thermal characteristics
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